学術論文（査読付き）

  1. Taiju Akushichi, Yota Takamura, Yusaku Shiotsu, Shuu’ichirou Yamamoto, and Satoshi Sugahara, "Spin Injection Behavior of CoFe/MgO/Si Tunnel Contacts: Effects of Radical Oxygen Annealing", J. Electron. Mater., vol. 52, no. 10, 2023, pp. 6902-6910.
  2. Yusaku Shiotsu, and Satoshi Sugahara, "Binarized Neural Network Accelerator Macro Using Ultralow-Voltage Retention SRAM for Energy Minimum-Point Operation", IEEE J. Explor. Solid-State Comput. Devices Circuits (JXCDC), vol. 8, 2022, pp. 134-144.
  3. Hayato Yoshida, Yusaku Shiotsu, Daiki Kitagata, Shuu’ichirou Yamamoto, and Satoshi Sugahara, "Ultralow-Voltage Retention SRAM With a Power Gating Cell Architecture Using Header and Footer Power-Switches", IEEE Open J. Circuits Syst. (OJCAS), vol. 2, 2021, pp. 520-533.
  4. Y. Shiotsu, S. Yamamoto, Y. Shuto, H. Funakubo, M. K. Kurosawa and S. Sugahara, "Modeling and Design of a New Piezoelectronic Transistor for Ultralow-Voltage High-Speed Integrated Circuits", IEEE Trans. Electron Devices, vol. 67, no. 9, 2020, pp. 3852-3860.
  5. Y. Shiotsu, T. Seino, T. Kondo and S. Sugahara, "Modeling and Design of Thin-Film π-Type Micro Thermoelectric Generator Using Vacuum/Insulator-Hybrid Isolation for Self-Powered Wearable Devices", IEEE Trans. Electron Devices, vol. 67, no. 9, 2020, pp. 3834-3842.
  6. Daiki Kitagata, Shuu’ichirou Yamamoto, and Satoshi Sugahara, “Proactive useless data flush architecture for nonvolatile SRAM using magnetic tunnel junctions", IEICE Electron. Express, vol. 17, no. 5, 2020, pp. 20200032/1-5.
  7. Y. Shiotsu, T. Seino, N. Chiwaki and S. Sugahara, "Thin-Film π-Type Micro TEG Using Vacuum/Insulator-Hybrid Isolation with Convex-Shape Hot-Plate Module Structure for Wearable Device Applications", J. Phys.: Conf. Ser. , vol. 1407, 2019, pp. 012099/1-4.
  8. D. Kitagata, S. Yamamoto, and S. Sugahara, “Design and energy-efficient architectures for nonvolatile static random access memory using magnetic tunnel junctions”, Jpn. J. Appl. Phys., vol. 58, no. SB, 2019, pp. SBBB12/1-10.
  9. N. Chiwaki, T. Seino, and S. Sugahara, “Design and performance of transverse-type thin-film nano-thermoelectric generators”, J. Micromech. Microeng., vol. 28, no. 9, 2018, pp. 094003/1-6.
  10. N. Chiwaki, T. Seino, and S. Sugahara, "Design and Performance of Transverse-Type Thin-Film Nano-Thermoelectric Generators", J. Phys.: Conf. Ser. , vol. 1052 , 2018, pp. 012133/1-4.
  11. Y. Takamura, Y. Shuto, S. Yamamoto, H. Funakubo, M. K. Kurosawa , S. Nakagawa, S. Sugahara, “Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM”, Solid-State Electronics, vol. 128, 2017, pp. 194-199.
  12. Yasuyuki Ikuse, Taiju Akushichi, Yusuke Shuto, Yota Takamura, and Satoshi Sugahara, “Spin injection into silicon using CoFe/TiO2/Si tunnel contacts”, AIP advances, to be published.
  13. Y. Kawame, T. Akushichi, Y. Takamura, Y. Shuto, and S. Sugahara, “Fabrication and characterization of a spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5 /MgO /Si tunnel contact”, J. Appl. Phys., vol. 117, no. 17, 2015, pp. 17D151/1-3.
  14. Taiju Akushichi, Yota Takamura, Yusuke Shuto, and Satoshi Sugahara, “Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing”, J. Appl. Phys., vol. 117, no. 17, 2015, pp. 17B531/1-4.
  15. Y. Takamura, T. Akushichi, Y. Shuto, and S. Sugahara, “Analysis and design of nonlocal spin devices with bias-induced spin-transport acceleration”, J. Appl. Phys., vol. 117, no. 17, 2015, pp. 17D919/1-4.
  16. R. Nakane, Y. Shuto, H. Sukegawa, Z.C. Wen, S. Yamamoto, S. Mitani, M. Tanaka, K. Inomata, and S. Sugahara, "Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip", Solid-State Electronics, vol. 102, 2014, pp. 52-58.
  17. Y. Takamura, T. Akushichi, A. Sadano, T. Okihio, Y. Shuto, and S. Sugahara, "Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices", J. Appl. Phys. vol. 115, no. 17, 2014, pp. 17C307/1-3.
  18. S. Yamamoto, Y. Shuto, and S. Sugahara, “Nonvolatile flip-flop based on pseudo-spin-transistor architecture and its nonvolatile power-gating applications for low-power CMOS logic”, Eur. Phys. J. Appl. Phys., vol. 63, no. 1, 2013, pp. 14403/p1-p9.
  19. S. Yamamoto, Y. Shuto, and S. Sugahara, “Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions”, Jpn. J. Appl. Phys., vol. 51, no. 11, 2012, pp. 11PB02/1-5.
  20. Y. Takamura, K. Hayashi, Y. Shuto, R. Nakane, and S. Sugahara, “Fabrication of half-metallic tunnel contact with Co2FeSi electrode on Si(001) using radical-oxynitridation SiOxNy tunnel barrier”, J. Electronic Matt., vol. 41, no. 5, 2012, pp. 954-958.
  21. Y. Takamura, and S. Sugahara, “Analysis and Control of the Hanle Effect in MOS Inversion Channels”, J. Appl. Phys., vol. 109, no. 7, 2012, pp. 07B768/1-3.
  22. Y. Shuto, S. Yamamoto, and S. Sugahara, “Evaluation and control of break-even time of nonvolatile SRAM based on spin-transistor architecture with spin-transfer-torque MTJs”, Jpn. J. Appl. Phys., vol. 51, no. 4, 2012, pp. 040212/1-3.
  23. Y. Takamura, and S. Sugahara, “Analysis and Design of Hanle-Effect Spin Transistors at 300 K”, Magn. Lett., vol. 2, 2011, pp. 3000404/1-4.
  24. S. Yamamoto, Y. Shuto, and S. Sugahara, “Nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs for power-gating systems”, IET Electronics Letters, vol. 47, no. 18, pp. 1027-1029, Sept. 2011.
  25. Y. Takamura, T. Sakurai, R. Nakane, Y. Shuto, and S. Sugahara, “Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing”, J. Appl. Phys., vol. 109, no. 7, 2011, pp. 07B768/1-3.
  26. S. Yamamoto, and S. Sugahara, “Nonvolatile Delay Flip-Flop Based on Spin-Transistor Architecture and Its Power-Gating Applications”, Jpn. J. Appl. Phys., vol. 49, no. 9, 2010, pp. 090204/1-3.
  27. Y. Takamura, R. Nakane, and S. Sugahara, “Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co Kα and Cu Kα sources”, J. Appl. Phys., vol. 107, no. 9, 2010, pp. 09B111/1-3.
  28. K. Hayashi, Y. Takamura, R. Nakane, and S. Sugahara, “Formation of Co2FeSi/SiOxNy/Si tunnel junctions for Si-based spin transistors”, J. Appl. Phys. vol. 107, no. 9, 2010, pp. 09B1041/1-3.
  29. S. Yamamoto, Y. Shuto, and S. Sugahara, “Nonvolatile SRAM (NV-SRAM) Using Resistive Switching Devices: Variable-Transconductance MOSFET Approach”, Jpn. J. Appl. Phys., vol. 49, no. 4, 2010, pp. 040209/1-3.
  30. Y. Shuto, R. Nakane, W. H. Wang, H. Sukegawa, S. Yamamoto, M. Tanaka, K. Inomata, and S. Sugahara, “A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET”, Appl. Phys. Exp., vol. 3, no. 1, 2010, pp. 013003/1-3.
  31. Y. Shuto, S. Yamamoto, and S. Sugahara, “Nonvolatile Static Random Access memory based on spin-transistor architecture”, J. Appl. Phys., vol. 105, no.7, 2009, pp. 07C933/1-3.
  32. Y. Takamura, R. Nakane, and S. Sugahara, “Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing”, J. Appl. Phys., vol. 105, no. 7, 2009, pp. 07B109/1-3.
  33. S. Yamamoto, and S. Sugahara, “Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture”, Jpn. J. Appl. Phys., vol. 48, no. 4, 2009, pp. 043001/1-7.
  34. Y. Takamura, A. Nishijima, Y. Nagahama, R. Nakane, and S. Sugahara, “Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors”, ECS Transactions, vol. 16, no. 10, 2008, pp. 945-952.
  35. Y. Shuto, M. Tanaka, and S. Sugahara, “Germanium-based ferromagnetic semiconductor Ge1-xFex for silicon spintronics”, ECS Transactions, vol. 16, no. 10, 2008, pp. 953-960.
  36. Y. Shuto, M. Tanaka, and S. Sugahara, “Epitaxial Growth and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFex Thin Films Epitaxially Grown on Si(001) Substrates”, Jpn. J. Appl. Phys., vol. 47, no. 9, pp. 7108-7112.
  37. T. Hoshii, M. Deura, M. Sugiyama, R. Nakane, S. Sugahara, M. Takenaka, Y. Nakano, and S. Takagi, “Epitaxial Lateral Overgrowth of InGaAs on SiO2 from (111) Si Micro Channel Areas”, Physica Status Solidi C, vol. 5, no. 9, 2008, pp. 2733-2735.
  38. Y. Takamura, R. Nakane, H. Munekata, and S. Sugahara, “Characterization of Half-Metallic L21-Phase Co2FeSi Full-Heusler Alloy Thin Films Formed by Rapid Thermal Annealing”, J. Appl. Phys., vol. 103, no. 7, 2008, pp. 07D719/1-3.
  39. S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka and N. Sugiyama, “Carrier-transport-enhanced channel CMOS for improved power consumption and performance”, IEEE Trans. Electron Devices, vol. 55, no. 1, 2008, pp. 21-39.
  40. M. Shichijo, R. Nakane, S. Sugahara, and S. Takagi, “Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique”, Jpn. J. Appl. Phys., vol. 46, no. 9A, 2007, pp. 5930-5934.
  41. M. Tanaka, and S. Sugahara, “MOS-Based Spin Devices for Reconfigurable Logic”, IEEE Trans. Electron. Dev. vol. 54, no. 5, 2007, pp. 961-976.
  42. S. Takagi, T.Maeda, N.Taoka, M.Nishizawa, Y.Morita, K.Ikeda, Y.Yamashita, M.Nishikawa, H.Kumagai, R.Nakane, S.Sugahara, N.Sugiyama, “Gate Dielectric Formation and MIS Interface Characterization on Ge”, Microelectronic Engineering, vol. 84, no. 9-10, 2007, pp. 2314-2319.
  43. T. Uehara, H. Matsubara, S. Sugahara, and S. Takagi, “Ultrathin Ge-On-Insulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy”, Jpn. J. Appl. Phys., vol. 46, no. 4B, 2007, pp. 2117-2121.
  44. T. Hoshii, S. Sugahara, and S. Takagi, “Effect of Tensile Strain on Gate Current of Strained-Si n-MOSFETs”, Jpn. J. Appl. Phys., vol. 46, no. 4B, 2007, pp. 2122-2126.
  45. S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane, S.S ugahara, “Device Structures and Carrier Transport Properties of Advanced CMOS Using High Mobility Channels”, Solid-State Electronics, vol. 51, no. 4 , 2007, pp. 526-536.
  46. Y. Shuto, M. Tanaka, and S. Sugahara, “Structural and Magnetic Properties of Epitaxially Grown Ge1-xFex Thin Films: Fe Concentration Dependence”, Appl. Phys. Lett., vol. 90, no. 13, 2007, pp. 132512/1-3.
  47. S. Sugahara, “Perspective on Field-Effect Spin-Transistors”, Physica Status Solidi C, vol. 3, no. 12, 2006, pp. 4405-4413.
  48. Y. Shuto, M. Tanaka, and S. Sugahara, “Epitaxial Growth and Magnetic Properties of a New Group-IV Ferromagnetic Semiconductor: Ge1-xFex”, Physica Status Solidi C, vol. 3, no. 12, 2006, pp. 4110-4114.
  49. S. Sugahara, and M. Tanaka, “Spin MOSFETs As a Basis for Spintronics”, ACM Trans. on Storage, vol. 2, no. 2, 2006, pp. 197-219.
  50. R. Nakane, M. Tanaka, and S. Sugahara, “Preparation and Characterization of Ferromagnetic DO3-phase Fe3Si Thin Films on Silicon-on-Insulator Substrates for Si-based Spin-Electronic Device Applications”, Appl. Phys. Lett., vol. 89, no. 19, 2006, pp. 192503/1-3.
  51. S. Shuto, M. Tanaka, and S. Sugahara, “Magneto-Optical Properties of a New Group IV Ferromagnetic Semiconductor Ge1-xFex Grown by Low-Temperature Molecular Beam Epitaxy”, J. Appl. Phys. vol. 99, no. 8, 2006, pp. 08D516/1-3.
  52. S. Sugahara, K. L. Lee, S. Yada, and M. Tanaka, “Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films”, Jpn. J. Appl. Phys. Express Lett., vol. 44, no. 48, 2005, pp. L1426-L1429.
  53. S. Sugahara, “Spin Metal-Oxide-Semiconductor Field-Effect Transistors (Spin MOSFETs) for Spin-Electronic Integrated Circuits”, IEE Proc. Circuits, Device-Systems, vol. 152, no. 4, 2005, pp. 355-365.
  54. S. Sugahara, and M.Tanaka, “A Spin Metal-Oxide-Semiconductor Field-Effect Transistor (Spin MOSFET) with a Ferromagnetic Semiconductor for the Channel”, J. Appl. Phys., vol. 97, no. 10, 2005, pp. 10D503/1-3.
  55. R. Nakane, J. Kondo, M. W. Yuan, S. Sugahara, and M. Tanaka, “Growth and Magnetic Properties of Epitaxial MnAs/NiAs/MnAs Heterostructures Grown on Exact GaAs(111)B Substrates”, J. Crystal Growth, vol. 278, no. 1-4, 2005, pp. 649-659.
  56. S. Sugahara, and M. Tanaka, “A Spin Metal-Oxide-Semiconductor Field-effect Transistor Using Half-Metallic-Ferromagnet Contacts for the Source and Drain”, Appl. Phys. Lett., vol. 84, no. 13, 2004, pp. 2307-2309.
  57. S. Sugahara, and M. Tanaka, “Spin-Filter Transistor”, Jpn. J. Appl. Phys., vol. 43, no. 7A, 2004, pp. L838-L841.
  58. T. Matsuno, S. Sugahara, and M. Tanaka, “Novel Reconfigurable Logic Gates Using Spin Metal-Oxide- Semiconductor Field-Effect Transistors”, Jpn. J. Appl. Phys., vol. 43, no. 9A, 2004, pp. 6032-6037.
  59. R. Nakane, S. Sugahara, and M. Tanaka, “The Effect of Post-Growth Annealing on the Morphology and Magnetic Properties of MnAs Thin Films Grown on GaAs(001) Substrates”, J. Appl. Phys., vol. 95, no. 11, 2004, pp. 6558-6561.
  60. S. Sugahara, and M. Tanaka, “A Novel Spin Transistor Based on Spin-Filtering in Ferromagnetic Barriers: A Spin-Filter Transistor”, Physica E, vol. 21, no. 2-4, 2004, pp. 996-1001.
  61. R. Nakane, S. Sugahara, and M. Tanaka, “Growth and Magnetoresistance of Epitaxial Metallic MnAs/NiAs/MnAs Trilayers on GaAs(001) Substrates”, Physica E, vol. 21, no. 2-4, 2004, pp. 991-995.
  62. S. Sugahara, and M. Tanaka, “Epitaxial Growth and Magnetic Properties of Single-Crystal MnAs/AlAs/ MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates: The Effect of an Ultrathin GaAs Buffer Layer”, J. Crystal Growth, vol. 251, no. 1-4, 2003, pp. 317-322.
  63. M. Tanaka, Y. Higo, and S. Sugahara, “Spin-Polarized Tunneling in Fully Epitaxial Semiconductor-Based Magnetic Tunnel Junctions”, J. Superconductivity: Incorporating Novel Magnetism, vol. 16, no. 2, 2003, pp. 241-248.
  64. A. M. Nazmul, S. Sugahara, and M. Tanaka, “Ferromagnetism and High Curie Temperature in Semiconductor Heterostructures with Mn δ-Doped GaAs and p-Type Selective Doping”, Phys. Rev. B, vol. 67, no. 24, 2003, pp. 241308/1-4.
  65. A. M. Nazmul, S. Sugahara, and M. Tanaka, “MBE Growth, Structural, and Transport Properties of Mn δ-Doped GaAs Layers”, J. Crystal Growth, vol. 251, no. 1-4, 2003 pp. 303-310.
  66. S. Sugahara, and M. Tanaka, “Growth Characteristics and Tunneling Magnetoresistance of MnAs/AlAs/MnAs Trilayer Heterostructures Grown on Vicinal GaAs(111)B Substrates”, Physica E, vol. 13, no. 2-4, 2002, pp. 582-588.
  67. S. Sugahara, and M. Tanaka, “Tunneling Magnetoresistance in Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions Grown on Vicinal GaAs(111)B Substrates”, Appl. Phys. Lett., vol. 80, no. 11, 2002, pp. 1969-1971.
  68. A. M. Nazmul, S. Sugahara, and M. Tanaka, “Transport Properties of Mn δ-Doped GaAs and the Effect of Selective Doping”, Appl. Phys. Lett., vol. 80, no. 17, 2002, pp. 3120-3122.
  69. S. Sugahara, and M. Tanaka, “Atomic-Scale Surface Morphology of epitaxial ferromagnetic MnAs Films Grown on Vicinal GaAs(111)B Substrates”, J. Appl. Phys., vol. 89, no. 11, 2001, pp. 6677-6679.
  70. S. Sugahara, T. Kadoya, K. Usami, T. Hattori, and M. Matsumura, “Preparation and Characterization of Low-k Silica Film Incorporated with Methylene Groups”, J. Electrochem. Soc., vol. 148, no. 6, 2001, pp. F120-F126.
  71. T. Fukumura, S. Sugahara, and M. Matsumura, “A Low-Temperature Dehydration Method of Silica Films”, Jpn. J. Appl. Phys., vol. 40 , no. 1AB, 2001, pp. L46-L48.
  72. K. Ikeda, J. Yanase, S. Sugahara, Y. Uchida, and M. Matsumura, “Characterization of Initial One Monolayer Growth of Ge on Si(100) and Si on Ge(100)”, Appl. Surf. Sci., vol. 175-176, 2001, pp. 1-5.
  73. Y. Satoh, K. Ikeda, S. Sugahara, and M. Matsumura, “Atomic-Layer Epitaxy of Silicon on (100) surface”, Jpn. J. Appl. Phys., vol. 39, no. 10, 2000, pp. 5732-5736.
  74. M. Matsuyama, S. Sugahara, K. Ikeda, Y. Uchida, and M. Matsumura, “Hetero-Atomic Layer Epitaxy of Ge on Si(100)”, Jpn. J. Appl. Phys., vol. 39, no. 5A, 2000, pp. 2536-2540.
  75. S. Sugahara, T. Fukumura, and M. Matsumura, “Oxidation Mechanism of Fluorocarbon-Incorporated Silica for Interlayer Dielectric Materials”, Materials Science in Semiconductor Processing, vol. 3, no. 1-2, 2000, pp. 79-84.
  76. Y. Uchida, T. Katoh, S. Sugahara, and M. Matsumura, “Chemical Vapor Deposition Based Preparation on Porous Silica Films”, Jpn. J. Appl. Phys., vol. 39, no. 11B, 2000, pp. L1155-L1157.
  77. K. Usami, S. Sugahara, M. Kobayashi, K. Sumimura, T. Hattori, and M. Matsumura, “Preparation and Properties of Silica Films with Higher-Alkyl Groups”, Non-Crystalline Solids, vol. 260, no. 3, 1999, pp. 199-207.
  78. S. Sugahara, K. Usami, and M. Matsumura, “A Proposed Organic-Silica Film for Inter-Metal-Dielectric Application”, Jpn. J. Appl. Phys., vol. 38, no. 3A, 1999, pp. 1428-1432.
  79. S. Sugahara, M. Matsuyama, K. Hosaka, K. Ikeda, Y. Uchida, and M. Matsumura, “A Novel Layer-by-Layer Hetero-Epitaxy of Germanium on Silicon (100) Surface”, Mater. Res. Soc. Symp. Proc., vol. 533, 1998, pp. 333-338.
  80. S. Sugahara, K. Hosaka, and M. Matsumura, “Hydrogen-Induced Abstraction Mechanism of Surface Methyl Groups in Atomic-Layer-Epitaxy of Germanium”, Appl. Surf. Sci., vol. 130-132, 1998, pp. 327-333.
  81. K. Ikeda, S. Sugahara, Y. Uchida, T. Nagai, and M. Matsumura, “Formation of Atomically Abrupt Si/Ge Hetero-Interface”, Jpn. J. Appl. Phys., vol. 37, no. 3B, 1998, pp. 1311-1315.
  82. E. Hasunuma, S. Sugahara, S. Hoshino, S. Imai, K. Ikeda, and M. Matsumura, “Gas-Phase-Reaction-Controlled Atomic-Layer Epitaxy of Silicon”, J. Vac. Sci. Technol. A, vol. 16, no. 2, 1998, pp. 679-684.
  83. S. Sugahara, and M. Matsumura, “Modeling of Germanium Atomic-Layer-Epitaxy”, Appl. Surf. Sci., vol. 112, 1997, pp. 176-186.
  84. S. Sugahara, Y. Uchida, T. Kitamura, T. Nagai, M. Matsuyama, T. Hattori, and M. Matsumura, “Proposed Atomic-Layer-Deposition of Germanium on Si Surface”, Jpn. J. Appl. Phys., vol. 36, no. 3B, 1997, pp. 1609-1613.
  85. S. Morishita, S. Sugahara, and M. Matsumura, “Atomic-Layer Chemical-Vapor-Deposition of Silicon-Nitride”, Appl. Surf. Sci., vol. 112, 1997, pp. 198-204.
  86. S. Sugahara, T. Kitamura, S. Imai, Y. Uchida, and M. Matsumura, “Ideal Monolayer Adsorption of Germanium on Si(100) Surface”, Appl. Surf. Sci., vol. 107, 1996, pp. 137-144.
  87. S. Sugahara, E. Hasunuma, S. Imai, and M. Matsumura, “Modeling of Silicon Atomic-Layer- Epitaxy”, Appl. Surf. Sci., vol. 107, 1996, pp. 161-171.
  88. S. Sugahara, M. Kadoshima, T. Kitamura, S. Imai, and M. Matsumura, “Atomic Hydrogen-Assisted ALE of Germanium”, Appl. Surf. Sci., vol. 90, no. 3, 1995, pp. 349-356.
  89. S. Sugahara, T. Kitamura, S. Imai, and M. Matsumura, “Atomic Layer Epitaxy of Germanium”, Appl. Surf. Sci., vol. 82-83, 1994, pp. 380-386.
  90. S. Sugahara, O. Sugiura, and M. Matsumura, “Electronic Structures of Si-Based Manmade Crystals”, Jpn. J. Appl. Phys., vol. 32, no. 1B, 1993, pp. 384-388.
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