トップ > A list of Publications > Papers (1994 - 1999)
1) N. Kano, S. Hirose, K. Hara, J. Yoshino, H. Munekata and H. Kukimoto: AlAs Layers with Low Carbon Content Growth by ALE Using Ethyldimethylamine Alane as a New Aluminum Source; Appl. Surf. Sci. 82/83, 132-135 (1994).
2) N. Kano, S. Hirose, K. Hara, J. Yoshino, H. Munekata and H. Kukimoto: Atomic Layer Epitaxy of AlAs Using Ethyldimethylamine Alane as a New Aluminum Source; Appl. Phys. Lett. 65, 1115-1117, (1994). 3) E. Deleporte, T. Lebihen, B. Ohnesorge, Ph. Roussignol, C. Delalande, S. Guha and H. Munekata: Magnetic tailoring of the nature of the fundamental optical transition in a ZnSe/(Zn,Mn)Se heterostructure; Phys. Rev. B 50, 4514-4523 (1994). 4) H. Munekata; "Amonalous Hall effect in III-V-based magnetic semiconductor heterostructures", Materials Sci. and Engineering B 31, 151-156 (1995). 5) K. Hara, H. Machimura, M. Usui, H. Munekata, H. Kukimoto and J. Yoshino; "Growth and Characterization of Wide Bandgap Zn1-xHgxSe", J. Cryst. Growth 150, 725-728 (1995). 6) K. Watanabe, M. Hosoya, K. Hara, J. Yoshino, H. Munekata and H. Kukimoto; "Inducement of GaAs growth by electron beam irradiation on GaAs covered by native oxide", J. Cryst. Growth 150, 612-615 (1995). 7) 宗片 比呂夫; "III-V族希薄磁性半導体", 電学論A, 115巻, 317-323 (1995). 8) H. Munekata; "III-V Based Diluted Magnetic Semiconductors: Carrier-Induced Magnetism", Advanced Materials 7, 82-85 (1995). 9) K Hara, H. Machimura, M. Usui, H. Munekata, H. Kukimoto and J. Yoshino; "Gas-Source Molecular Beam Epitaqxy of Wide-Band-Gap Zn1-xHgxSe (x=0-0.14)", Appl. Phys. Lett. 66, 3337-3339 (1995). 10) Y.F Qian, K. Hara and H. Kukimoto; "Blue-Emitting ac-Electroluminescent Cells Based on ZnS:Tm, Li Powder Phosphor", Jpn. J. Appl. Phys. 34, pp. L368-L370 (1995). 11) S. Hirose, N. Kano, M. Deura, K. Hara, H. Munekata and H. Kukimoto; "Dimethylamine as a Carbon Remover in Atomic Layer Epitaxy of AlAs", Jpn. J. Appl. Phys. 34, pp.L1436-L1438 (1995). 12) Y.L. Soo, W. Huang, Z.H. Ming, Y.H. Kao, Hiro Munekata and L.L. Chang: 13) P. Fumagalli and H. Munekata: Magneto-optic Properties and Ferromagnetism of (In,Mn)As/(In,Al)As/(Ga,Al)Sb Heterostructures; Phys. Rev. B 53, 15045-15053 (1996). 14) S. Huang, Z.H. Ming, Y.L. Soo, Y.H. Kao, M. Tanaka and H. Munekata; X-ray Scattering and Absorption Studies of MnAs/GaAs Heterostructures; J. Appl. Phys. 79, 1435-1440 (1996). 15) T. Honda, T. Sakaguchi, F. Koyama, K. Iga, K. Inoue, H. Munekata and H. Kukimoto: Design and Fabrication of ZnSe-based Blue/Green Surface Emitting Lasers; J. Cryst. Growth 159, 595-599 (1996). 16) T. Honda, S.W. Lim, K. Yanashima, K. Inoue, K. Hara, H. Munekata, H. Kukimoto, F. Koyama and K. Iga: Formation of Highly Conductive p-Type ZnSe Using Li3N Diffusion; Jpn. J. Appl. Phys. 35, 3878-3879 (1996). 17) K. Shiraishi, J. Kitamura, K. Hara, H. Munekata and H. Kukimoto: Growth and Optical Properties of Strained (AlP)n(GaP)n Short-Period Superlattices; J. Electronic Materials 25, 1801-1805 (1996). 18) K. Inoue, K. Yanashima, T. Takahashi, J. S. Hwang, K. Hara, H. Munekata and H. Kukimoto: Growth of p-type ZnSe by Metalorganic Vapor Phase Epitaxy Using Ethylazide as a New Nitrogen Source; J. Cryst. Growth 159, 130-133 (1996). 19) K. Hara, K. Yamamoto, Y. Eguchi, M. Usui, H. Munekata and H. Kukimoto: Optical Properties of Wide Bandgap ZnHgSSe Layers Grown by Molecular Beam Epitaxy; J. Cryst. Growth 159, 45-49 (1996). 20) K. Watanabe, M. Momose, K. Hara, H. Munekata and H. Kukimoto: Selective Area Chemical Beam Epitaxy of GaAs Using Ga2O3 as a Mask Layer; J. Cryst. Growth 169, 223-226 (1996). 21) H. Munekata, T. Abe, S. Koshihara, A. Oiwa, M. Hirasawa, S. Katsumoto, Y. Iye, C. Urano and H. Takagi : Light-induced ferromagnetism in III-V-based diluted magnetic semiconductor heterostructures ; J. Appl. Phys. 81, 4862-4864 (1997). 22) S. Koshihara, A. Oiwa, M. Hirasawa, S. Katsumoto, Y. Iye, C. Urano, H. Takagi, and H. Munekata : Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn)As/GaSb ; Phys. Rev. Lett. 78, 4617-4620 (1997). 23) Y. Eguchi, K. Hara, K. Yamamoto, S. Haneda, H. Kukimoto and H. Munekata : Blue-Green Stimulated Emission in Lattice-Matched ZnHgSSe/ZnSSe Double Heterostructures by Optical Pumping; Jpn. J.Appl. Phys. 36, 1972-1975 (1997). 24) S. Hirose, N. Kano, K. Hara, H. Munekata and H. Kukimoto : Atomic layer epitaxy of AlAs and (AlAs)n(GaAs)n superlattices with a new alminum source ethyldimethylamine alane; J. Cryst. Growth 172, 13-17 (1997). 25) K.Nishida, S.Haneda, K.Hara, H.Munekata, and H.Kukimoto: MOCVD of GaN using a specially designed two-flow horizontal reactor ; J. Cryst. Growth 170, 312-315 (1997). 26) K.Nishida, K.Uchida, M.Kondo, H.Kukimoto, and H.Munekata: Heteroepitaxy of GaN and related materials with a novel two-flow MOVPE horizontal reactor; Appl. Surf. Sci. 117/118, 530-535 (1997). 27) A.Oiwa, Y.Iye, S.Katsumoto, A.Endo, M.Hirasawa, H.Ohno, F.Matsukura, A. Shen, Electrical and Magnetic Properties of (In,Mn)As/(Al,Ga)Sb Heterostructures and Bulk (Ga,Mn)As; Proc. in 12th Intrn’l Conf. High Magnetic Fields in the Physics of Semiconductors, 885-888 (1997). 28) Y.J. Park, E.K. Kim, I.K. Han, S.K. Min, P. O’Keeffe, H. Mutoh, H. Munekata, H. Kukimoto: Study of Defects Generated from a Nitridation of GaAs Surface; Appl. Surf. Sci. 117/118, 551-557 (1997). 29) H. Mutoh, P.O’Keeffe, S.Den, S.Komuro, T.Morikawa, Y.J.Park, K.Hara, H.Munekata, and H. Kukimoto: Nitridation of Al2O3 and GaAs Surfaces by Control Enhanced ECR Plasma; Appl. Surf. Sci. 113/114, 622-626 (1997). 30) T. Kondo, A. Ishii, H. Munekata: Nanoscale Polydiacetylene Wire Structures Prepared by Molecular Beam Deposition on Semiconductor Substrates; Physica E 2, 991-995 (1998). 31) S. Hirose, M. Yamaura, A. Yoshida, H. Ibuka, K. Hara, H. Munekata: Mechanism of atomic layer epitaxy of AlAs; J. Cryst. Growth 194, 16-24 (1998). 32) S. Koshihara, H. Munekata, A.Oiwa, M. Hirasawa, S. Katsumoto, Y. Iye, C. Urano, H. Takagi: Photocarrier induced ferromagnetic order in III-V-based magnetic semiconductor heterostructures of (In,Mn)As/GaSb; Physica E 2, 417-420 (1998). 33) K. Uchida, K. Nishida, M. Kondo, H. Munekata: Characterization of double-buffer layers and its application for the metalorganic vapor phase epitaxial growth of GaN; Jpn. J. Appl. Phys. 37, 3882-3888 (1998). 34) K. Uchida, K. Nishida, M. Kondo, H. Munekata: Epitaxial growth of GaN layers with double-buffer layers; J. Cryst. Growth 189/190, 270-274 (1998). 35) K. Hara, S. Haneda, Y. Eguchi, H. Munekata: Wide band-gap ZnHgSSe for visible lasers; J. Cryst. Growth 184/185, 610-613 (1998). 36) H. Munekata and S. Koshihara; Carrier-induced magnetism: how and what we pursue with III-V-based magnetic semiconductor heterostructures ?; Superlattices and Microstructures 25, 251 - 258 (1999). 37) A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, H. Ohno and H. Munekata: Magnetic and transport properties of the ferromagnetic heterostructures (In,Mn)As/(Ga,Al)Sb; Phys. Rev. B 59, 5826-5831 (1999). 38) S. Hirose, A. Yoshida, M. Yamaura, and H. Munekata: Surface smoothing of GaAs microstructure by atomic layer epitaxy; Appl. Phys. Lett. 74, 964-966 (1999). 39) T. Kondo, A. Ishii, H. Munekata, and K. Takeda: Three-step molecular beam deposition of crystalline polydiacetylene films on semiconductor substrates with large crystal domains; Jpn. J. Appl. Phys. 38(7A), L764-766 (1999). |